In the given work are studied restoration degradatsionnye properties αNiTi-nSi in diodes Shottki (DSH) with thermoannealing and ultrasonic processing broken by an irradiation γin-quanta of characteristics of solar elements (SE), the amorphous materials made with application. Restoration degradatsionnye properties αNiTi-nSi in diodes Shottki (DSH) are connected with change of structure amorphous Ni35Ti65 an alloy, time the basic stage of process annealing "cures" the damaged diodes. The experimental results proving possibility restoration and managements in parametres silicon SE by means of ultrasonic processing (UP) are considered. Restoration electrophysical and photo-electric properties SE with UP broken γ an irradiation are connected from a regrouping and athermic annealing the radiating defects formed γ in-quanta.

The experimental results demonstrating the ability to influence and control - leniya parameters of silicon solar cells by sonication (RCD). The possibility of partial recovery of photovoltaic properties of solar cells that disturbed -γ irradiation with ultrasonic treatment. C to investigate the impact of RCD on the change in the mechanism of charge transport, after each step of ultrasonic treatment, we measured the photovoltaic characteristics and temperature dependence of current-voltage characteristics of silicon solar cells [SC] in the forward and reverse current. The temperature was varied from 80K to 350K.