Theoretical Approach to ITO/PVK/Dye/Inga Organic Light Emitting Diodes for Different Thickness of PVK Layer

Mohua Singh; A. K. Shrivastav; Sanjay Tiwari

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International Journal of Advanced Research in Physical Science

Volume 6, Issue 4, 2019, Page No: 8-16

Theoretical Approach to ITO/PVK/Dye/Inga Organic Light Emitting Diodes for Different Thickness of PVK Layer

Mohua Singh^1*, A. K. Shrivastav¹, Sanjay Tiwari²

1.Department of Applied Physics, National Institute of Technology, Raipur 492010 (C.G.), India.
2.School of Studies in Physics & Electronics, Pt. Ravishankar Shukla University, Raipur 492010 (C.G.), India .

Citation : Mohua Singh, A. K. Shrivastav, Sanjay Tiwari, Theoretical Approach to ITO/PVK/Dye/Inga Organic Light Emitting Diodes for Different Thickness of PVK Layer International Journal of Advanced Research in Physical Science 2019, 6(4) : 8-16.

Introduction

In this work, organic light emitting diodes were fabricated using a double layer device with the general structure ITO/PVK/dye/InGa. Three different dyes were used, namely: Rhodamine B, Crystal violet, and Bromophenol blue. Three different PVK layer thicknesses were used with each dye. The double layer system was sandwiched between indium tin oxide (ITO) and Indium-Gallium alloy (InGa) as anode and cathode, respectively. The J-V characteristic curves were investigated in details with the PVK layer thickness. The conduction mechanisms were also studied.

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